1/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.02 - rev.b wemt6 abbreviated symbol : u41 (6) (5) (4) (1) (2) (3) 2.5v drive nch+sbd mosfet es6u41 ? structure ? dimensions (unit : mm) silicon n-channel mosfet / schottky barrier diode ? features 1) nch mosfet and schottky barrier diode- are put in wemt6 package. 2) high-speed switching, low on-resistance. 3) low voltage drive (2.5v drive). 4) built-in low v f schottky barrier diode. ? applications switching ? package specifications ? inner circuit packagecode taping basic ordering unit (pieces) es6u41 t2r 8000 type ? absolute maximum ratings (ta=25 ? c) ? 1 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp limits unit drain-source voltage gate-source voltage drain current continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 30 1.5 6.0 0.75 6.0 c tch channel temperature 150 ? 2 p d power dissipation w / element 0.7 12 ? 1 parameter v v rm symbol v v r a i f a i fsm tj limits unit repetitive peak reverse voltage reverse voltage forward current ? 1 60hz 1cycle ? 2 mounted on ceramic board forward current surge peakjunction temperature 2520 0.52.0 ? 2 power dissipation w / element p d 0.5 150 c ? parameter symbol w / total p d c tstg limits unit power dissipation range of storage temperature ? mounted on a ceramic board 55 to + 150 0.8 (1)gate(2)source (3)anode (4)cathode (5)drain (6)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (1) (2) (6) (3) (4) (5) sot-563t downloaded from: http:///
2/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.02 - rev.b data sheet es6u41 ? electrical characteristics parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ?? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltagezero gate voltage drain current gate threshold voltagestatic drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed 10 av gs = 12v, v ds =0v 30 vi d = 1ma, v gs =0v 1 av ds = 30v, v gs =0v 0.5 1.5 v v ds = 10v, i d = 1ma 170 240 i d = 1.5a, v gs = 4.5v 180 250 m m m i d = 1.5a, v gs = 4v 240 340 i d = 1.5a, v gs = 2.5v 1.5 sv ds = 10v, i d = 1.5a 80 pf v ds = 10v 1412 pf v gs =0v 7 pf f=1mhz 9 ns 15 ns 6 ns 1.6 ns 0.5 2.2 nc 0.3 nc nc v dd 15v, v gs = 4.5v i d = 1.5a, r l 10 v dd 15 v i d = 0.75a v gs = 4.5v r l 20 r g = 10 r g = 10 v sd 1.2 v i s = 0.75a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions v f 0.36 v i f = 0.1a forward voltage i r 100 a v r = 20v reverse current parameter symbol min. typ. max. unit conditions 0.52 v i f = 0.5a downloaded from: http:///
3/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.02 - rev.b data sheet es6u41 ? electrical characteristics curves 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c 0 0.5 1 1.5 2 024681 0 v gs = 1.5v ta=25c pulsed v gs = 10v v gs = 2.5v v gs = 2.2v v gs = 1.6v v gs = 1.7v v gs = 1.8v 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 v gs = 1.6v ta=25c pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 2.2v v gs = 1.8v v gs = 1.7v 0.001 0.01 0.1 1 10 0.5 1.0 1.5 2.0 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 10 100 1000 0.01 0.1 1 10 v gs = 2.5v v gs = 4.0v v gs = 4.5v ta=25c pulsed 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 10 100 1000 0.01 0.1 1 10 v gs = 4.0v pulsed ta=125c ta=75c ta=25c ta= -25c 10 100 1000 0.01 0.1 1 10 v gs = 4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 10 100 1000 0.01 0.1 1 10 v gs = 2.5v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain current : i d [a] gate-source voltage : v gs [v] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] forward transfer admittance : |yfs| [s] drain-current : i d [a] reverse drain current : is [a] source-drain voltage : v sd [v] downloaded from: http:///
4/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.02 - rev.b data sheet es6u41 0 200 400 600 800 1000 024681 0 ta=25c pulsed i d = 0.75a i d = 1.50a 0 1 2 3 4 5 00 . 511 . 52 ta=25c v dd = 15v i d = 1.5a r g =10 ? pulsed 1 10 100 1000 0.01 0.1 1 10 100 ciss coss crss ta=25c f=1mhz v gs =0v 1 10 100 1000 0.01 0.1 1 10 t r t d (on) t d (off) ta=25c v dd = 15v v gs = 4.5v r g =10 ? pulsed t f fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics static drain-source on-state resistance : r ds (on)[m ? ] gate-source voltage : v gs [v] switching time : t [ns] drain-current : i d [a] gate-source voltage : v gs [v] total gate charge : qg [nc] drain-source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 pulsed ta= - 25 ta = 25 ta = 75 0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 pulsed ta= - 25 ta = 25 ta = 75 reverse voltage : v r [v] fig.1 reverse current vs. reverse voltage forward voltage : v f [v] fig.2 forward current vs. forward voltage forward current : i f (a) reverse current : i f (a) :i r ( ? a) downloaded from: http:///
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